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论文片段—65nm工艺下的大规模芯片越来越多,后端物理设计变得更加复杂,遇到了新问题,如高集成度、层次化设计、泄漏功耗、多角落-多模式、串扰噪声等,签收的标准也发生了变化。因此改进物理设计方法学,适应新的情况,来取得流片成功。关键词:90/65nm;后端设计;集成度;层次化设计;串扰噪声;多模式-多角落;泄漏功耗;动态电压降;签收 深亚微米下芯片后端物理设计方法学研究
摘要:摩尔定律的发展,90/65nm工艺下的大规模芯片越来越多,后端物理设计变得更加复杂,遇到了新问题,如高集成度、层次化设计、泄漏功耗、多角落-多模式、串扰噪声等,签收的标准也发生了变化医药论文。因此改进物理设计方法学,适应新的情况,来取得流片成功。
关键词:90/65nm;后端设计;集成度;层次化设计;串扰噪声;多模式-多角落;泄漏功耗;动态电压降;签收
IC physical design methodology research under D
ZENG Hong
( Verisilicon Microelectronics (Shanghai) Co., Ltd, Shanghai 201204, China)
Abstract: Now IC industry has come to 90/65nm process node. The physical design flow becomes more complicated, with many new problems emerging, such as high cell density, hierarchical design flow, leakage power, multi-corner multi-mode, crosstalk noise, etc. The tapeout signoff criterion he changed a lot. So the physical design flow must be updated to ensure the first-silicon success.
Key words:90/65nm;backend design;cell density;hierarchical design flow;crosstalk;multi-corner multi-mode;leakage power;dynamic IR-Drop;signoff
1单元集成度提高,门数增加
表1的是从180nm到45nm 台积电(TC)工艺 Metal 2 最小间距(pitch)的变化趋势 图书馆论文。-以上为可参考的写作提示
摘要:摩尔定律的发展,90/65nm工艺下的大规模芯片越来越多,后端物理设计变得更加复杂,遇到了新问题,如高集成度、层次化设计、泄漏功耗、多角落-多模式、串扰噪声等,签收的标准也发生了变化医药论文。因此改进物理设计方法学,适应新的情况,来取得流片成功。
关键词:90/65nm;后端设计;集成度;层次化设计;串扰噪声;多模式-多角落;泄漏功耗;动态电压降;签收
IC physical design methodology research under D
ZENG Hong
( Verisilicon Microelectronics (Shanghai) Co., Ltd, Shanghai 201204, China)
Abstract: Now IC industry has come to 90/65nm process node. The physical design flow becomes more complicated, with many new problems emerging, such as high cell density, hierarchical design flow, leakage power, multi-corner multi-mode, crosstalk noise, etc. The tapeout signoff criterion he changed a lot. So the physical design flow must be updated to ensure the first-silicon success.
Key words:90/65nm;backend design;cell density;hierarchical design flow;crosstalk;multi-corner multi-mode;leakage power;dynamic IR-Drop;signoff
1单元集成度提高,门数增加
表1的是从180nm到45nm 台积电(TC)工艺 Metal 2 最小间距(pitch)的变化趋势 图书馆论文。-以上为可参考的写作提示